【 基本介紹 】

林男明 兼任助理教授

組別 光電與半導體領域
專長/研究領域 ※ LED封裝及元件製作
※ 照明燈具(LED)光學模擬與分析
※ 光學薄膜設計與製作
電話 – –
信箱 nanming0520@gmail.com
實驗室 ※ 鍍膜及光電測試實驗室：榮譽校區ZA308-1
開授課程 107學年度第一學期開授課程：固態照明設計
105學年度第二學期開授課程：光學薄膜設計與應用
105學年度第一學期開授課程：電子電路實驗(二)
學歷 國立臺南大學電機工程學系博士
經歷 現職：堤維西交通工業股份有限公司/技術研究所/電子技術課/資深工程師

1.高苑科技大學電子工程系講師(兼任) 2009/08~2013/09
2.華美電子股份有限公司研發處開發二部研發工程師(兼任) 2010/01~2010/12
3.海立爾股份有限公司專案產品開發部研發工程師(專任)2013/05~2013/11
4.國立臺南大學電機工程學系講師與助理教授(兼任) 2016/08~2017/07
5.天勤光電股份有限公司研發處研發工程師(專任)2017/08~2018/04
榮譽及獎勵
(至少五年內)		 2011電子通訊與應用研討會論文佳作(組別:光電)
論文名稱:Street lighting reflector coating with high-reflectance yellow band Ag mirror + SiO2/TiO2 DBR,
作者: 翁花秀、許世昌、林男明、林懷勳
專利
(至少五年內)		 1.許世昌,林男明,江文瑞 中華民國專利 M383704 2010/07/01高反射率之多層鍍膜
2.江文瑞,許世昌,林男明 中華民國專利 M415259 2011/11/01燈具反光罩
3.許世昌,林男明,中華民國專利M443828 2012/12/21 LED路燈二次光學透鏡
4.林男明,許世昌,吳家豪,中華民國專利M565772 2018/8/21 具有晶片直接封裝式發光二極體的手術燈裝置
重要著作 01. Nan-Ming Lin, Shih-Chang Shei, and Shoou-Jinn Chang, Fellow, IEEE,“Design and Fabrication of a TiO2/SiO2 Dielectric Broadband and Wide-Angle Reflector and Its Application to GaN-Based Blue LEDs”, IEEE Journal of Quantum Electronics, Vol. 51, No. 7, 3300405, 2015.(SCI)
02. Nan-Ming Lin, Shih-Chang Shei, and Shoou-Jinn Chang, “Solution-Growth ZnO Nanorods for Light Extractionin GaN-Based Flip-Chip LEDs”, ECS Solid State Letters, 4, R23-R25 (2015) (SCI)03. Shoou-Jinn Chang, Nan-Ming Lin, and Shih-Chang Shei,“GaN-Based Power Flip-Chip LEDs With SILAR and Hydrothermal ZnO Nanorods”, IEEE Journal of Selected Topics In Quantum Electronics, Vol. 21, No. 4,9100405, (2015).(SCI)
04. N. M. Lin, S. C. Shei, and S. J. Chang, “Nitride-Based LEDs With High-Reflectance and Wide-Angle Ag Mirror+SiO2/TiO2 DBR Backside Reflector”, IEEE/OSA J. Lightwave Technol., Vol. 29, No. 7, pp. 1033-1038, 2011. (SCI)
05. N. M. Lin, S. C. Shei, S. J. Chang, X. F. Zeng,“GaN-based LEDs with omnidirectional metal underneath an insulating SiO2 layer”, IEEE Photon. Technol. Lett., Vol. 24, No. 10, pp. 815-817, 2012. (SCI)
06. N. M. Lin, S. C. Shei, S. J. Chang, “GaN-based LEDs with a Thermally Stable Mirror Structure underneath an Insulating SiO2 Layer”, IET Vol. 6, pp. 277–281,2012. (SCI)
07. N. M. Lin, S. C. Shei, S. J. Chang, “Investigation of Ni/Ag contact to p-GaN with an O2 plasma treatment and its application to GaN-based LEDs”, Phys. Status Solid A, Vol. 209, No. 8, pp. 1568-1574, 2012. (SCI)
08. N. M. Lin, S. J. Chang, S. C. Shei, W. C. Lai, Y. Y. Yang, W. C. Lin, and H. M. Lo, “GaN-based LEDs with air voids prepared by one-step MOCVD growth”, IEEE/OSA J. Lightwave Technol., Vol. 29, No. 18, pp. 2831-2835, 2011. (SCI)
09. S. C. Shei , X. F. Zeng, N. M. Lin, S. J. Chang,“SiNx nanopillars on AlGaInP-based light-emitting diodes to enhance light extraction using self-assembly ZnO nanomask coating by successive ionic layer adsorption and reaction method”, Thin Solid Films, 570, pp.230–234, 2014.(SCI)
10. Nan-Ming Lin, Shih-Chang Shei, and Shoou-Jinn Chang,“GaN-based LEDs grown on the cone-shaped patterned sapphire substrates with different height by ICP dry etching,” International conference on Apllied System and innoration (2015), May 22-27, in Osaka, Japan.
11. Nan-Ming Lin, Shih-Chang Shei, and Shoou-Jinn Chang, “GaN-based LEDs With a Mirror Structure and an Insulating Layer”, Symposium on Photonics and Optoelectronics (SOPO 2012), in Shanghai, China.